Kinetic properties of p-Mg2Si x Sn1 − x solid solutions for x < 0.4

Authors:

13 September 2009

journal article
Published by Pleiades Publishing Ltd in Physics of the Solid State

Vol. 51 (9) , 1796-1799
DOI:10.1134/s1063783409090066

Abstract

The results of a study of Mg₂Si_xSn_{1 − x} solid solutions (x = 0.25, 0.3, 0.35, 0.4) are reported. The measurements performed cover the Seebeck coefficient, electrical conductivity and the Hall coefficient over broad ranges of temperatures (80–700 K) and carrier concentrations (10¹⁸ to 6 × 10²⁰ cm⁻³). These measurements were used to derive the band structure parameters (band gap, hole mobility, hole effective mass). The effective mass of holes was found to grow strongly with an increase in their concentration.

Keywords

This publication has 2 references indexed in Scilit:

Highly effective ${Mg}_{2} {Si}_{1 - x} {Sn}_{x}$ thermoelectrics
Physical Review B, 2006
Kinetic properties of p-type Mg/sub 2/Ge/sub 0.4/Sn/sub 0.6/ solid solutions
2005