Bidirectional rectifier with gate voltage control based on Bi2O2Se/WSe2 heterojunction

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Abstract
Two-dimensional (2D) WSe2 has received increasing attention due to its unique optical properties and bipolar behavior. Several WSe2-based heterojunctions exhibit bidirectional rectification characteristics, but most devices have a lower rectification ratio. In this work, the Bi2O2Se/WSe2 heterojunction prepared by us has a type Ⅱ band alignment, which can vastly suppress the channel current through the interface barrier so that the Bi2O2Se/WSe2 heterojunction device has a large rectification ratio of about 105. Meanwhile, under different gate voltage modulation, the current on/off ratio of the device changes by nearly five orders of magnitude, and the maximum current on/off ratio is expected to be achieved 106. The photocurrent measurement reveals the behavior of recombination and space charge confinement, further verifying the bidirectional rectification behavior of heterojunctions, and it also exhibits excellent performance in light response. In the future, Bi2O2Se/WSe2 heterojunction field-effect transistors have great potential to reduce the volume of integrated circuits as a bidirectional controlled switching device.

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