Integrated Optical and Electrical Analysis: Identifying Location and Properties of Traps in AlGaN/GaN HEMTs During Electrical Stress
Authors:
- 6 May 2010
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 31 (7) , 662-664
Abstract
A new methodology is developed to determine spatial location and properties of traps generated by electrical stressing of AlGaN/GaN high-electron mobility transistors, based on integrated optical and electrical analysis. Mild off-state stress increases irreversibly the number of traps located in the near-surface AlGaN region at the gate edge. A deep level with 0.45-eV activation energy in fresh devices changes its nature to interacting defect after the off-state stress, accompanied by an activation energy change. These results are consistent with trap generation in the near-surface AlGaN region at the gate edge related to high electric field and gate leakage current, as stressing does not result in the generation of cracks in the AlGaN layer.Keywords
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