Degradation of Cu6Sn5 intermetallic compound by pore formation in solid–liquid interdiffusion Cu/Sn microbump interconnects
Authors:
- 1 April 2014
- journal article
- research article
- Published by Elsevier in Microelectronic Engineering
- Vol. 117, 26-34
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Underfill material screening and process characterization for 3D stacking2012
- Micro Cu Bump Interconnection on 3D Chip Stacking TechnologyJapanese Journal of Applied Physics, 2004
- The Cu-Sn (Copper-Tin) systemBulletin of Alloy Phase Diagrams, 1990
- Microstructures of Cu-rich Amalgams after CorrosionJournal of Dental Research, 1983
- Semiconductor Joining by the Solid-Liquid-Interdiffusion (SLID) ProcessJournal of the Electrochemical Society, 1966
- Mechanism of Dezincification - Corrosion of BrassIndustrial & Engineering Chemistry, 1934