Epoxy bond and stop-etch (EBASE) technique enabling backside processing of (Al)GaAs heterostructures
Authors:
- N.E. HarffNHN.E. Harff
- M.E. SherwinMSM.E. Sherwin
- H.C. ChuiHCH.C. Chui
- 1 December 1996
- journal article
- Published by Elsevier in Superlattices and Microstructures
- Vol. 20 (4) , 561-567