GaAsN/AlAs/AlGaAs double barrier quantum wells grown by molecular beam epitaxy as an alternative to infrared absorption below 4 μm

This publication has 11 references indexed in Scilit:

• Modulation-doped double-barrier quantum well infrared detectors for photovoltaic operation in 3-5 μm
  IEEE Photonics Technology Letters, 2003
• GaInNAs quantum well structures for 1.55μm emission on GaAs by atmospheric pressure metalorganic vapor phase epitaxy
  Journal of Crystal Growth, 2002
• Electronic Properties of Ga(In)NAs Alloys
  MRS Internet Journal of Nitride Semiconductor Research, 2001
• Evolution of ${\mathrm{GaAs}}_{1-x}{\mathrm{N}}_x$ conduction states and giant ${\mathrm{A}\mathrm{u}/\mathrm{G}\mathrm{a}\mathrm{A}\mathrm{s}}_{1-x}{\mathrm{N}}_x$ Schottky barrier reduction studied by ballistic electron emission spectroscopy
  Physical Review B, 2000
• Excitons bound to nitrogen clusters in GaAsN
  Applied Physics Letters, 1999
• Thermal Annealing of GaInNAs/GaAs Quantum Wells Grown by Chemical Beam Epitaxy and Its Effect on Photoluminescence
  Japanese Journal of Applied Physics, 1999
• GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
  Japanese Journal of Applied Physics, 1996
• Quantum-well infrared photodetectors
  Journal of Applied Physics, 1993
• Segregation of Si δ doping in GaAs-AlGaAs quantum wells and the cause of the asymmetry in the current-voltage characteristics of intersubband infrared detectors
  Applied Physics Letters, 1993
• Intersubband transitions in single AlGaAs/GaAs quantum wells studied by Fourier transform infrared spectroscopy
  Journal of Applied Physics, 1988