Improved Transfer of Graphene for Gated Schottky-Junction, Vertical, Organic, Field-Effect Transistors
Authors:
- Maxime G. LemaitreMLMaxime G. Lemaitre
- Evan P. DonoghueEDEvan P. Donoghue
- Mitchell A. McCarthyMMMitchell A. McCarthy
- Bo LiuBLBo Liu
- Sefaattin TongaySTSefaattin Tongay
- Brent GilaBGBrent Gila
- Bill R. AppletonBABill R. Appleton
- Andrew G. RinzlerAndrew G. Rinzler
- 28 September 2012
- journal article
- research article
- Published by American Chemical Society (ACS) in ACS Nano
- Vol. 6 (10) , 9095-9102
Abstract
An improved process for graphene transfer was used to demonstrate high performance graphene enabled vertical organic field effect transistors (G-VFETs). The process reduces disorder and eliminates the polymeric residue that typically plagues transferred films. The method also allows for purposely creating pores in the graphene of a controlled areal density. Transconductance observed in G-VFETs fabricated with a continuous (pore-free) graphene source electrode is attributed to modulation of the contact barrier height between the graphene and organic semiconductor due to a gate field induced Fermi level shift in the low density of electronic-states graphene electrode. Pores introduced in the graphene source electrode are shown to boost the G-VFET performance, which scales with the areal pore density taking advantage of both barrier height lowering and tunnel barrier thinning. Devices with areal pore densities of 20% exhibit on/off ratios and output current densities exceeding 106 and 200 mA/cm2, respectively, at drain voltages below 5 V.Keywords
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