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Integrated silicon nitride time-bin entanglement circuits
Home
Publications
Integrated silicon nitride time-bin entanglement circuits
Integrated silicon nitride time-bin entanglement circuits
Authors:
XZ
Xiang Zhang
Xiang Zhang
BB
Bryn A. Bell
Bryn A. Bell
AM
Andri Mahendra
Andri Mahendra
CX
Chunle Xiong
Chunle Xiong
PL
Philip H.W. Leong
Philip H.W. Leong
BE
Benjamin J. Eggleton
Benjamin J. Eggleton
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1 January 2018
conference paper
Published by
Optica Publishing Group
p.
FTh1G.8
DOI:
10.1364/cleo_qels.2018.fth1g.8
Abstract
Time-bin entangled states are generated and analyzed in an integrated silicon nitride chip. Quantum state tomography indicates 91% fidelity to the ideal state, demonstrating its potential for applications in quantum communication networks.
Keywords
TIME BIN
BIN ENTANGLED
SILICON NITRIDE
STATE TOMOGRAPHY
IDEAL STATE
QUANTUM STATE
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