Surface Potential at as-Grown GaN(0001) MBE Layers
- 3 December 2002
- journal article
- conference paper
- Published by Wiley in Physica Status Solidi (b)
- Vol. 234 (3) , 773-777
Abstract
No abstract availableKeywords
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- AlN and GaN epitaxial heterojunctions on 6H–SiC(0001): Valence band offsets and polarization fieldsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1999