Surface Emission Vertical Cavity Transistor Laser
Authors:
- 8 June 2012
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 24 (15) , 1346-1348
Abstract
We demonstrate the first surface emission vertical cavity transistor laser (VCTL) operation with an InGaP heterojunction bipolar transistor incorporating the InGaAs quantum-wells in the base and vertical distributed Bragg reflectors. The transistor collector I-V characteristics show gain (β = ΔIc/ΔIB) compression, β decreasing from 0.52 to 0.47, due to the base recombination shifting from spontaneous to stimulated with increasing base current (IB >; ITH). The surface emission VCTL threshold current is ITH ~ 3 mA for a cavity of 9×6 μm2 lateral dimensions. The laser spectra at IB = 10 mA exhibit two peaks at 975.12 and 975.22 nm with linewidth Δλ ~ 0.7 Å.Keywords
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