Highly Efficient Harmonically Tuned InP D-HBT Push-Push Oscillators Operating up to 287 GHz
Authors:
- 1 June 2007
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 0149645X,p. 341-344
Abstract
Integrated push-push oscillators, achieving high output power at 210, 235 and 287 GHz, were realized in a 0.5 μm emitter double-heterojunction InGaAs/InP HBT (D-HBT) technology with a maximum oscillation frequency f max of 335 GHz and a breakdown voltage (V bceo ) of 4V. The oscillators are based on a balanced Colpitts topology in which a strong second harmonic signal is generated by combining the differential signals at the collector and by reactively tuning the output impedance of the oscillator using a shorted stub. Three oscillators were realized using this topology. A high-power output signal of more then 0 dBm is obtained for oscillators operating at 210 and 232 GHz, an improvement of 5 dB compared to the output power measured on an identical push-push oscillator without 2 nd harmonic tuning. Close to -3 dBm output power is obtained at an output frequency of 280 GHz by further reducing the resonator length. By reducing the current, a maximum output frequency of 287 GHz is obtained.Keywords
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