TCAD study of sub-THz photovoltaic response of strained-Si MODFET
Open Access
- 13 October 2015
- conference paper
- Published by IOP Publishing in Journal of Physics: Conference Series
- Vol. 647 (1) , 012041
Abstract
This paper reports on a bi-dimensional TCAD study of the sub-THz response of strained-Si MODFETs. A charge boundary condition for the floating drain contact was implemented to obtain the photovoltaic (PV) response of the device. A non-resonant THz PV response was obtained in agreement with theoretical and experimental works. A main result of this study is that the PV response is strongly influenced by both the gate length and the gate topology. In particular, it was found that a dual-finger gate gives the maximum response at 300GHz.Keywords
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