The impact of epitaxial layer design and quality on GaInAs/AlInAs high-electron-mobility transistor performance

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Abstract
Ga0.47In0.53As–Al0.48In0.52As high‐electron mobility transistors (HEMT’s) exhibit high transconductance and gain because of the high conductivities achievable in the structures. The effect of epitaxial layer design (spacer thickness and active channel thickness) on conductivity is examined. Device characteristics are examined as a function of active channel thickness. Reduced output conductance is observed for a 200 Å channel, but with a reduced transconductance.