Integration of waveguides and photodetectors in SiGe for 1.3 /spl mu/m operation
Authors:
- E. KasperEKE. Kasper
- H. KibbelHKH. Kibbel
- H.-J. HerzogHHH.-J. Herzog
- H. PrestingHPH. Presting
- 1 January 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 6 (1) , 59-61
Abstract
The integration of single-mode rib waveguides and photodetectors in silicon using MBE-grown SiGe-layers is reported. Short photodetectors exhibit dark currents below 200 nA at 7 V reverse bias. For the fiber-waveguide-detector coupling an overall quantum efficiency of 11% has been achieved at 7 V reverse bias for /spl lambda/=1.3 /spl mu/m. The maximum bandwidth is 2 GHz.Keywords
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