Comprehensive modeling of resistive switching in the Al/TiOx/TiO2/Al heterostructure based on space-charge-limited conduction

The reversible resistance switching (RS) effect of the $\text{Al}/{\text{TiO}}_{\text{x}}/{\text{TiO}}_2/\text{Al}$ heterostructure is investigated in this study. This RS was attributed to space-charge-limited conduction (SCLC) as controlled by localized traps in the ${\text{TiO}}_{\text{x}}$ layer. The preexisting SCLC theory was extended to describe the abrupt resistance transition. An analytical model was developed with consideration of the ratio of free and trapped carrier density, which was extracted from the experimental data to show exponentially distributed traps in energy. The proposed model can be applicable to RS phenomena induced by interface-type traps in other material system.