Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop

Blue multi-quantum-well light-emitting diodes (LEDs) with GaInN quantum wells and polarization-matched AlGaInN barriers are grown by metal-organic chemical vapor deposition. The use of quaternary alloys enables an independent control over interface polarization charges and bandgap and has been suggested as a method to reduce electron leakage from the active region, a carrier loss mechanism that can reduce efficiency at high injection currents—an effect known as the efficiency droop. The $\mathrm{Ga}\mathrm{In}\mathrm{N}∕\mathrm{Al}\mathrm{Ga}\mathrm{In}\mathrm{N}$ LEDs show reduced forward voltage, reduced efficiency droop, and improved light-output power at large currents compared to conventional $\mathrm{Ga}\mathrm{In}\mathrm{N}∕\mathrm{Ga}\mathrm{N}$ LEDs.