Abstract
In this article, the structural properties and pH sensing characteristics of sensing films deposited on Si(100) substrates through reactive sputtering were reported. X-ray diffraction, X-ray photoelectron spectroscopy, and atomic force microscopy were used to explore the structural and morphological features of these films with annealing at various temperatures. We found that the films annealed at exhibit a higher sensitivity of 56.01 mV/pH, a lower hysteresis voltage of 4.71 mV, and a smaller drift rate of 1.34 mV/h than that of the other thermal annealing conditions.

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