Random telegraph signal currents and low-frequency noise in junction field effect transistors
Author:
- K. KandiahKKK. Kandiah
- 1 January 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 41 (11) , 2006-2015
Abstract
No abstract availableThis publication has 24 references indexed in Scilit:
- A physical model for random telegraph signal currents in semiconductor devicesJournal of Applied Physics, 1989
- Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noiseAdvances in Physics, 1989
- 1/f and random telegraph noise in silicon metal-oxide-semiconductor field-effect transistorsApplied Physics Letters, 1985
- Discrete Resistance Switching in Submicrometer Silicon Inversion Layers: Individual Interface Traps and Low-Frequency (?) NoisePhysical Review Letters, 1984
- Low frequency noise in junction field effect transistorsSolid-State Electronics, 1978
- Characteristics of burst noise intermittencySolid-State Electronics, 1978
- Generation-recombination noise produced in the channel of JFET'sIEEE Transactions on Electron Devices, 1975
- Carrier density fluctuation noise in silicon junction field effect transistors at low temperaturesSolid-State Electronics, 1971
- 1/ƒ noise is no surface effectPhysics Letters A, 1969
- Burst noise of silicon planar transistorsElectronics Letters, 1966