Atomic layer deposition of zinc oxide and indium sulfide layers for Cu(In,Ga)Se2 thin-film solar cells
Authors:
- E.B YousfiEYE.B Yousfi
- B WeinbergerBWB Weinberger
- F DonsantiFDF Donsanti
- P CowachePCP Cowache
- D LincotDLD Lincot
- 1 May 2001
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 387 (1-2) , 29-32
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Cadmium-free buffer layers deposited by atomic later epitaxy for copper indium diselenide solar cellsThin Solid Films, 2000
- Wet treatment based interface engineering for high efficiency Cu(In,Ga)Se 2 solar cellsThin Solid Films, 2000
- Study of atomic layer epitaxy of zinc oxide by in-situ quartz crystal microgravimetryApplied Surface Science, 2000
- Delay characteristics of surface charging on a cylindrical insulator in vacuum1999