Recent progress in InGaAsP high power lasers
Authors:
- Saeko OshibaSOSaeko Oshiba
- Yoshio KawaiYKYoshio Kawai
- 1 January 1990
- conference paper
- Published by Optica Publishing Group
- p. TUC1
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- High-power aging tests of 1.3 and 1.5 μm VIPS lasersElectronics Letters, 1987
- High-power output over 200 mW of 1.3 µm GaInAsP VIPS lasersIEEE Journal of Quantum Electronics, 1987
- V-grooved inner-stripe laser diodes on a p-type substrate operating over 100 mW at 1.5 μm wavelengthApplied Physics Letters, 1987
- Reliability of 1.3 μm V-grooved inner-stripe laser diodes under high-power operationElectronics Letters, 1986