Accelerated publication 16.4% total‐area conversion efficiency thin‐film polycrystalline MgF2/ZnO/CdS/Cu(In,Ga)Se2/Mo solar cell
Authors:
- 1 October 1994
- journal article
- research article
- Published by Wiley in Progress in Photovoltaics: Research and Applications
- Vol. 2 (4) , 287-292
Abstract
This communication reports an MgF2/ZnO/CdS/Cu(In,Ga)Se2/Mo/glass polycrystalline solar cell with a confirmed total‐area conversion efficiency of 16.4%. the thin‐film Cu(In,Ga)Se2absorber was fabricated by computer‐controlled physical vapor deposition (PVD) from the elemental sources. the resulting absorber has a Gal/In compositional grading that we refer to as a notch. Capacitance‐voltage (C‐V) measurements also reveal a graded doping profile in the region near the electronic p‐n junction. the enhanced device performance is characterized by an open‐circuit voltage (Voc) of 660 mV and a particularly high fill factor (FF) of 78.7%.Keywords
This publication has 3 references indexed in Scilit:
- High efficiency polycrystalline Cu(In,Ga)Se2-based solar cellsAIP Conference Proceedings, 1994
- Graded band-gap Cu(In,Ga)Se2 thin-film solar cell absorber with enhanced open-circuit voltageApplied Physics Letters, 1993
- Solar cell efficiency tablesProgress in Photovoltaics: Research and Applications, 1993