Simulation of high power step-buffer 4H silicon carbide metal semiconductor field effect transistor
Authors:
- 1 May 2018
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 1-5
Abstract
Current density and breakdown voltage of step-buffer 4H-SiC metal semiconductor field effect transistor (4H-SiC MESFET) are simulated by using ISE-TCAD. Simulated results show that current density of the step-buffer structure is higher than that of the conventional structure at the same gate bias, 800 mA/mm and 600 mA/mm at Vgs=-4V, respectively. The breakdown happened in the gate corner close to the drain since there crowds most electric field line and the breakdown voltage of the step-buffer 4H-SiC MESFET is 140V, 40 per cent higher than that of the conventional 4H-SiC MESFET because there is a more dispersive electric field distribution. So, the step-buffer 4H-SiC MESFET has better power performance, when compared with the conventional structure.Keywords
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