Junction characteristics of pulsed laser deposition grown Gd2O3 on p-silicon
Authors:
- 1 June 2009
- journal article
- research article
- Published by Elsevier in Physica E: Low-dimensional Systems and Nanostructures
- Vol. 41 (7) , 1201-1203
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Effect of an organic compound (Methyl Red) interfacial layer on the calculation of characteristic parameters of an Al/Methyl Red/p-Si sandwich Schottky barrier diodeThin Solid Films, 2008
- Structural and Luminescence Properties of Nanocrystalline Eu3+-doped Gd2O3MRS Proceedings, 2008
- Transparent p-AgCoO2/n-ZnO diode heterojunction fabricated by pulsed laser depositionThin Solid Films, 2007
- Magneto-transport Properties of Gd-doped In2O3 Thin FilmsMRS Proceedings, 2007
- Rare-earth oxide thin films for gate dielectrics in microelectronicsJournal of Alloys and Compounds, 2006
- Gadolinium oxide thin films by atomic layer depositionJournal of Crystal Growth, 2005
- Properties of Thermal Gadolinium Oxide Films on SiliconJapanese Journal of Applied Physics, 2005
- DC conduction properties of Gadolinium–Indium oxide films deposited on Si(100)Solid-State Electronics, 2005
- Optical and dielectric properties of gadolinium–indium oxide films prepared on Si (1 0 0) substrateChemical Physics Letters, 2004
- The determination of interface state energy distribution of the H-terminated Zn/p-type Si Schottky diodes with high series resistance by the admittance spectroscopyVacuum, 2004