Structure and dielectric properties of recurrent intergrowth structures formed by the Aurivillius family of bismuth oxides of the formula Bi2An−1BnO3n+3
Authors:
- G.N. SubbannaGSG.N. Subbanna
- T.N.Guru RowTRT.N.Guru Row
- C.N.R. RaoCRC.N.R. Rao
- 1 June 1990
- journal article
- Published by Elsevier in Journal of Solid State Chemistry
- Vol. 86 (2) , 206-211
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Intergrowth structures: the chemistry of solid-solid interfacesAccounts of Chemical Research, 1985
- Elastic strain at the solid-solid interface in intergrowth structures : A novel example of partial structure refinement by HREMMaterials Research Bulletin, 1984
- A homologous series of recurrent intergrowth structures of the type Bi4Am + n − 2Bm + nO3(m + n) + 6 formed by oxides of the aurivillius familyJournal of Solid State Chemistry, 1984
- Structural basis of ferroelectricity in the bismuth titanate familyMaterials Research Bulletin, 1971