InGaN/GaN quantum wells with low growth temperature GaN cap layers
Authors:
- S.T. PendleburySPS.T. Pendlebury
- P.J. ParbrookPPP.J. Parbrook
- D.J. MowbrayDMD.J. Mowbray
- D.A. WoodDWD.A. Wood
- K.B. LeeKLK.B. Lee
- 1 September 2007
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 307 (2) , 363-366
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Effects of barrier growth temperature ramp-up time on the photoluminescence of InGaN∕GaN quantum wellsJournal of Applied Physics, 2007
- Photoluminescence and phonon satellites of single InGaN∕GaN quantum wells with varying GaN cap thicknessApplied Physics Letters, 2006
- Carrier dynamics of high-efficiency green light emission in graded-indium-content InGaN/GaN quantum wells: An important role of effective carrier transferApplied Physics Letters, 2004
- III–V Nitrides: A New Age for OptoelectronicsMRS Bulletin, 2003
- Wide-bandgap semiconductor ultraviolet photodetectorsSemiconductor Science and Technology, 2003
- Effects of barrier growth temperature on the properties of InGaN/GaN multi-quantum wellsJournal of Crystal Growth, 2003
- Influence of GaN barrier growth temperature on the photoluminescence of InGaN/GaN heterostructuresJournal of Physics D: Applied Physics, 2002
- Epitaxial growth of III–V nitride semiconductors by metalorganic chemical vapor depositionJournal of Crystal Growth, 1997
- Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nmApplied Physics Letters, 1997
- Wide-gap semiconductor InGaN and InGaAln grown by MOVPEJournal of Electronic Materials, 1992