Deep Reactive Ion Etching of Lead Zirconate Titanate Using Sulfur Hexafluoride Gas
Authors:
- 1 May 1999
- journal article
- Published by Wiley in Journal of the American Ceramic Society
- Vol. 82 (5) , 1339-1641
Abstract
A deep reactive ion etching (RIE) technique that uses sulfur hexafluoride (SF 6 ) gas has been developed for lead zirconate titanate (Pb(Zr,Ti)O 3 , PZT) three‐dimensional microfabrication from PZT ceramic blocks. The etching was performed by using an inductively coupled plasma that was generated in a narrow‐gap vacuum chamber. The etch depth was 70 µm with a maximum etch rate of 0.3 µm/min and a selectivity of PZT to the electroplated nickel mask of >35:1. The sidewalls of the PZT structures were tapered, with base angles of ∼75°. Both positive RIE lag and unexpected ultrafine‐slit etching phenomena were observed.Keywords
This publication has 12 references indexed in Scilit:
- Etching effects to PZT capacitors with RuOx/Pt electrode by using inductively coupled plasmaIntegrated Ferroelectrics, 1997
- Overview of Fine‐Scale Piezoelectric Ceramic/Polymer Composite ProcessingJournal of the American Ceramic Society, 1995
- PZT-polymer composites fabricated with YAG laser cutterSensors and Actuators A: Physical, 1994
- Partially stabilized zirconia-polymer composites fabricated with an ultrasonic cutterJournal of Materials Science Letters, 1993
- Reactive Ion Etching of Sputtered PbZr1-xTixO3 Thin FilmsJapanese Journal of Applied Physics, 1992
- PcI2: New piezoelectric composites for ultrasonic transducersFerroelectrics, 1992
- Excimer-laser-induced etching of ceramic PbTi1−xZrxO3Journal of Applied Physics, 1987
- Machining of PZT, PT and (Mn, Zn)Fe2O4 Ceramics by Laser-Induced Chemical EtchingJapanese Journal of Applied Physics, 1987
- Etched Piezoelectric Structures1986
- PZT-epoxy piezoelectric transducers: A simplified fabrication procedureMaterials Research Bulletin, 1981