Growth temperature optimization of GaAs-based In 0.83 Ga 0.17 As on In x Al 1 − x As buffers
Authors:
- 1 April 2018
- journal article
- research article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 488, 51-56
Abstract
No abstract availableKeywords
Funding Information
- National Key Research and Development Program of China (2016YFB0402400)
- National Natural Science Foundation of China (61405232, 61675225, 61605232)
- Shanghai Rising-Star Program (17QA1404900)
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