A Universal Interfacial Dipole Strategy for Defect Suppression in Inverted Perovskite Solar Cells With Tunable Bandgaps

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Abstract
Perovskite solar cells (PSCs) experience significant photovoltage losses due to nonradiative recombination, especially in p–i–n devices with Fullerene C 60 as the electron transport layer (ETL), which limits device performance. To tackle this issue, we propose a strategy that synergistically suppresses nonradiative recombination at the perovskite/C 60 interface by employing a 2D heterointerface with a two‐site anchor bridge, which reduces the surface defect density. This process elevates the fermi level and enhances the electric field, facilitating electron extraction at the perovskite/C 60 heterointerface. As a result, nonradiative recombination at this electron‐selective perovskite contact is greatly suppressed. p–i–n PSCs fabricated using this interface engineering approach achieved a power conversion efficiency (PCE) of 26.32% and demonstrated excellent stability under continuous maximum power point tracking, along with an open‐circuit voltage (Voc) of 1.217 V. This broadly applicable and scalable approach further delivers an impressive V oc of up to 1.368 V in wide‐bandgap (1.8 eV) devices. Overall, the strategy offers a viable pathway toward efficient and stable inverted PSCs, demonstrating broad compatibility with diverse perovskite compositions.

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