Effect of ZnO channel thickness on the device behaviour of nonvolatile memory thin film transistors with double-layered gate insulators of Al₂O₃and ferroelectric polymer

This publication has 21 references indexed in Scilit:

• Flexible low voltage nonvolatile memory transistors with pentacene channel and ferroelectric polymer
  Applied Physics Letters, 2009
• Nonvolatile memory based on sol-gel ZnO thin-film transistors with Ag nanoparticles embedded in the ZnO/gate insulator interface
  Applied Physics Letters, 2008
• Comparative electrical bistable characteristics of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer based nonvolatile memory device architectures
  Applied Physics Letters, 2008
• Fully transparent nonvolatile memory employing amorphous oxides as charge trap and transistor’s channel layer
  Applied Physics Letters, 2008
• Ferroelectric properties of spin-coated ultrathin (down to 10 nm) copolymer films
  Applied Physics Letters, 2008
• Program/Erase Characteristics of Amorphous Gallium Indium Zinc Oxide Nonvolatile Memory
  IEEE Transactions on Electron Devices, 2008
• Low-voltage polymer field-effect transistors for nonvolatile memories
  Applied Physics Letters, 2005
• High-performance solution-processed polymer ferroelectric field-effect transistors
  Nature Materials, 2005
• A nonvolatile memory element based on an organic field-effect transistor
  Applied Physics Letters, 2004
• All‐Organic Permanent Memory Transistor Using an Amorphous, Spin‐Cast Ferroelectric‐like Gate Insulator
  Advanced Materials, 2004