Hardness, Yield Strength, and Dislocation Velocity in Elemental and Compound Semiconductors
Author:
- 1 January 2005
- journal article
- Published by Japan Institute of Metals in MATERIALS TRANSACTIONS
- Vol. 46 (9) , 1979-1985
Abstract
No abstract availableKeywords
This publication has 30 references indexed in Scilit:
- Dislocation-Impurity Interaction in SiliconSolid State Phenomena, 2003
- Dynamic behavior of dislocations in InAs: In comparison with III–V compounds and other semiconductorsJournal of Applied Physics, 1998
- Plastic deformation of InP at temperatures between 77 and 500 KPhilosophical Magazine Letters, 1998
- Ultra-microindentation of silicon at elevated temperaturesPhilosophical Magazine A, 1996
- Fracture of GaAs WafersJapanese Journal of Applied Physics, 1988
- Fracture toughness of pure and in-doped GaAsScripta Metallurgica, 1988
- Dislocation glide motion in 6H SiC single crystals subjected to high-temperature deformationPhilosophical Magazine A, 1987
- Plastic deformation of HgSe single crystalsPhilosophical Magazine A, 1986
- Anisotropic deformation behaviour of GaAsPhysica Status Solidi (a), 1984
- Cleavage of gallium phosphideMaterials Letters, 1982