The TeraMOS sensor for monolithic passive THz imagers
- 1 November 2011
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 1-4
Abstract
We report of a new sensor, which is based on several leading technologies: THz photonics, CMOS-SOI (Silicon-on-Insulator) and MEMS/NEMS (Micro/Nano Electro Mechanical Systems). By introducing the TeraMOS sensor, which may be directly integrated with the CMOS-SOI readout circuitry, we expect to achieve a breakthrough in Terahertz passive imaging (0.5-1.5 THz) both in performance and cost. NEP (Noise Equivalent Power) of the order of 1 pW/Hz1/2 and NETD (Noise Equivalent Temperature Difference) of ~0.5K is expected at room temperature. Preliminary electro-optical measurements are presented.Keywords
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