Spin Hall Effect Transistor

Authors:
Publisher website
Google Scholar
Abstract
In a Spin Hall: The spin Hall effect, in which an electrical current causes accumulation of electron spins of opposite signs in the direction transverse to the current flow, provides a promising avenue of research in exploiting the spin degree of freedom in electronic devices. However, implementing the effect in a device is challenging. Wunderlich et al. (p. 1801 ) combine the concept of the spin Hall effect with that of a spin transistor, and build a nonmagnetic device in a which a spin current, injected by optical means, is “stripped” of its charge component, goes through a spin-modulation layer, and is detected using the inverse spin Hall effect. Such manipulation of the spin current may help in future spintronic applications.
All Related Versions

This publication has 28 references indexed in Scilit: