Interfacial charge effects on electron transport in III-Nitride metal insulator semiconductor transistors
Authors:
- 17 October 2011
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 99 (16) , 162104
Abstract
We report on the calculation of the two dimension electron gas (2DEG) mobility in scaled AlGaN/GaN metal-insulator-semiconductor high-electron-mobility-transistors. We investigate the effect of remote impurity and phonon scattering models on the 2DEG mobility of the dielectric/AlGaN/GaN structure and investigate its variation with dielectric/AlGaN interface charge density, 2DEG concentration, and AlGaN thickness. Remote impurity scattering was found to be the dominant mechanism when the 2DEG density is below 5 × 1012 cm−2 and dielectric/AlGaN interface charge density is above 5 × 1012 cm−2. The interfacial charge has significant effect on the mobility as the AlGaN cap layer thickness is scaled down below 5 nm.Keywords
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