Free-carrier and temperature effects in amorphous silicon thin films
Authors:
- 5 September 1988
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (10) , 880-882
Abstract
The electronic and thermal contributions to photoinduced changes in the optical properties of hydrogenated amorphous silicon (a‐Si:H) films can be distinguished in pump‐probe experiments by an appropriate choice of the probe wavelength. Intraband absorption decreases strongly with carrier localization.Keywords
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