Gate-recessed AlGaN-GaN HEMTs for high-performance millimeter-wave applications
Authors:
- Shihchang WuSWShihchang Wu
- D. WongDWD. Wong
- I. MilosavljevicIMI. Milosavljevic
- A. ConwayACA. Conway
- P. HashimotoPHP. Hashimoto
- M. HuMHM. Hu
- M. AntcliffeMAM. Antcliffe
- M. MicovicMMM. Micovic
- 23 May 2005
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 26 (6) , 348-350
Abstract
We report deep-submicrometer gate-recessed and field-plated AlGaN-GaN HEMTs and their state-of-the-art continuous wave (CW) power performance measured at 30 GHz. The AlGaN-GaN HEMTs exhibit a CW power density of 5.7 W/mm with a power-added efficiency (PAE) of 45% and drain-efficiency of 58% at V/sub ds/=20 V. At V/sub ds/=28 V, the output power density is measured as high as 6.9 W/mm with both PAE and output power increasing with input power level. Compared to conventional T-gated AlGaN-GaN HEMTs, the output power density and PAE of gate-recessed AlGaN-GaN HFETs are improved greatly, along with the excellent pulsed IVs. We attribute the improvement to both a field-plating effect and a vertical separation of the gate plane from surface states.Keywords
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