A comparison on the Electrical Characteristics of SiO2, SiON and SiN as the Gate Insulators for the Fabrication of AlGaN/GaN Metal–Oxide/Insulator–Semiconductor High-Electron Mobility-Transistors
- 1 July 2005
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 44 (7R)
Abstract
We report on the effect of SiO2, SiN and SiON insertion for the demonstration of AlGaN/GaN metal–oxide/insulator–semiconductor high-electron mobility-transistors (MOSHEMTs/MISHEMTs) on sapphire substrates. The compositions of the three dielectrics were confirmed using X-ray photoelectron spectroscopy (XPS). All the three dielectrics showed enhanced drain saturation current density compared to unpassivated high-electron mobility-transistors (HEMTs). The SiO2 MOSHEMTs though exhibited a very low leakage current, suffered from a relatively high degree of current collapse. The SiN MISHEMTs displayed a low drain current collapse, but, suffered from high degree of leakage current compared with other two dielectrics. SiON MOSHEMTs, taking the advantage of both SiO2 and SiN, resulted both in low drain current collapse as well as moderate leakage current. Thus based on the improved dc characteristics, SiON proves to be a potential dielectric candidate as it simultaneously mitigates the problem of current collapse and achieves moderate leakage current.Keywords
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