Field emission of nanostructured amorphous SiCN films deposited by reactive magnetron sputtering of SiC in CH4/N2 atmosphere
Authors:
- H.Y LinHLH.Y Lin
- Y.P TongYTY.P Tong
- K.H ChenK.H Chen
- L.C ChenL.C Chen
- 1 September 2002
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 416 (1-2) , 85-91
Abstract
No abstract availableKeywords
This publication has 32 references indexed in Scilit:
- Enhancement in field emission of silicon microtips by bias-assisted carburizationJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2000
- Deposition of silicon carbon nitride films by ion beam sputteringThin Solid Films, 1999
- Field emission from amorphous diamond coated Mo tip emitters by pulsed laser depositionJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1997
- Emission Characteristics of the Molybdenum-Coated Silicon Field Emitter ArrayJapanese Journal of Applied Physics, 1996
- Ion-assisted deposition of CN and SiCN filmsThin Solid Films, 1996
- Observation of a negative electron affinity for heteroepitaxial AlN on α(6H)-SiC(0001)Applied Physics Letters, 1994
- Field-dependence of the area-density of ‘cold’ electron emission sites on broad-area CVD diamond filmsElectronics Letters, 1993
- Vapor deposition processes for amorphous carbon films with sp3 fractions approaching diamondJournal of Applied Physics, 1991
- Diamond cold cathodeIEEE Electron Device Letters, 1991
- Quantum photoyield of diamond(111)—A stable negative-affinity emitterPhysical Review B, 1979