Ultralow-energy memory enabled by the facile oxidation of hexagonal boron nitride for charge trapping through the van der Waals gap
Authors:
- Jong Yun KimJKJong Yun Kim
- Oh Hun GwonOGOh Hun Gwon
- Euiyoung ChoiECEuiyoung Choi
- Beomkyu ShinBSBeomkyu Shin
- Hye Ryung ByunHBHye Ryung Byun
- Seok-Ju KangSKSeok-Ju Kang
- Daehyun RyuDRDaehyun Ryu
- Tae-In JeongTJTae-In Jeong
- San KimSKSan Kim
- Seungchul KimSKSeungchul Kim
- Philip KimPKPhilip Kim
- Han Seul KimHKHan Seul Kim
- 3 June 2025
- journal article
- Published by Elsevier in Nano Energy
- Vol. 142
Abstract
No abstract availableFunding Information
- Ministry of Education (RS-2020-NR049597, RS-2024-00461493)
- Korea Institute of Science and Technology Information (KSC-2024-CRE-0062)
- Air Force Office of Scientific Research (FA2386-24\u20131-4073)
- Ministry of Science and ICT, South Korea (RS-2024\u201300444458, RS-2022-NR070130, RS-2024-00453054)
- National Research Foundation of Korea
- Institute of Information & Communications Technology Planning & Evaluation (RS-2021-II210019, RS-2021-II211552)
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