Reliability evaluation of HfSiON gate dielectric film with 12.8 Å SiO/sub 2/ equivalent thickness
Authors:
- J. McPhersonJMJ. McPherson
- M.R. VisokayMVM.R. Visokay
- J.J. ChambersJCJ.J. Chambers
- A.L.P. RotondaroARA.L.P. Rotondaro
- H. BuHBH. Bu
- M.J. BevanMBM.J. Bevan
- R. KhamankarRKR. Khamankar
- L. ColomboLCL. Colombo
- 13 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 6.6.1-6.6.4
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Molecular model for intrinsic time-dependent dielectric breakdown in SiO2dielectrics and the reliability implications for hyper-thin gate oxideSemiconductor Science and Technology, 2000
- Gate oxide reliability projection to the sub-2 nm regimeSemiconductor Science and Technology, 2000
- On Pre-Breakdown Phenomena in Insulators and Electronic Semi-ConductorsPhysical Review B, 1938