DFT study of electron affinity of hydrogen terminated β-Si3N4
Authors:
- Shu Xia TaoSTShu Xia Tao
- Annemarie TheulingsATAnnemarie Theulings
- John SmedleyJSJohn Smedley
- Harry van der GraafHGHarry van der Graaf
- 1 March 2015
- journal article
- research article
- Published by Elsevier in Diamond and Related Materials
- Vol. 53, 52-57
Abstract
No abstract availableKeywords
Funding Information
- European Research Council (320764)
This publication has 39 references indexed in Scilit:
- Diamond Surfaces with Air‐Stable Negative Electron Affinity and Giant Electron Yield EnhancementAdvanced Functional Materials, 2013
- A spectroscopic study of the negative electron affinity of cesium oxide-coated diamond (111) and theoretical calculation of the surface density-of-states on oxygenated diamond (111)Diamond and Related Materials, 2002
- NROM: A novel localized trapping, 2-bit nonvolatile memory cellIEEE Electron Device Letters, 2000
- Silicon Nitride and Related MaterialsJournal of the American Ceramic Society, 2000
- Surface cleaning, electronic states and electron affinity of diamond (100), (111) and (110) surfacesSurface Science, 1998
- Photoelectron emission from the negative electron affinity caesiated natural diamond (100) surfaceDiamond and Related Materials, 1998
- Tuning the electron affinity of CVD diamond with adsorbed caesium and oxygen layersDiamond and Related Materials, 1997
- Anisotropic Etching of Crystalline Silicon in Alkaline Solutions: I . Orientation Dependence and Behavior of Passivation LayersJournal of the Electrochemical Society, 1990
- Plasma Si nitride—A promising dielectric to achieve high-quality silicon MIS/IL solar cellsJournal of Applied Physics, 1981
- Formation of Silicon Nitride at a Si ‐ SiO2 Interface during Local Oxidation of Silicon and during Heat‐Treatment of Oxidized Silicon in NH 3 GasJournal of the Electrochemical Society, 1976