N-polar GaN/InAlN MIS-HEMT with 400-GHz ƒmax
Authors:
- 1 June 2012
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 15483770,p. 151-152
Abstract
This paper reports 400-GHz f max using a tall-stem T-gate on an N-polar GaN/InAIN MIS-HEMT grown by MOCVD. This is the highest reported f max value to date for an N-polar GaN HEMT and is among the highest values for all GaN HEMTs. GaN-based HEMTs.Keywords
This publication has 2 references indexed in Scilit:
- N-Polar InAlN/AlN/GaN MIS-HEMTsIEEE Electron Device Letters, 2010
- Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowthApplied Physics Letters, 2010