AlGaN–GaN HEMTs on Si With Power Density Performance of 1.9 W/mm at 10 GHz
Authors:
- V. HoelVHV. Hoel
- C. GaquiereCGC. Gaquiere
- D. TheronDTD. Theron
- H. LahrecheHLH. Lahreche
- L. WedzikowskiLWL. Wedzikowski
- 28 June 2004
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 25 (7) , 453-455
Abstract
AlGaN-GaN high electron mobility transistors (HEMTs) on silicon substrate are fabricated. The device with a gate length of 0.3-μm and a total gate periphery of 300 μm, exhibits a maximum drain current density of 925 mA/mm at V/sub GS/=0 V and V/sub DS/=5 V with an extrinsic transconductance (g/sub m/) of about 250 mS/mm. At 10 GHz, an output power density of 1.9 W/mm associated to a power-added efficiency of 18% and a linear gain of 16 dB are achieved at a drain bias of 30 V. To our knowledge, these power results represent the highest output power density ever reported at this frequency on GaN HEMT grown on silicon substrates.Keywords
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