Development of a rapid thermal annealing process for polycrystalline silicon thin-film solar cells on glass
Authors:
- 15 March 2009
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 159-160, 329-332
Abstract
No abstract availableKeywords
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- The influence of polysilicon gate morphology on dopant activation and deactivation kinetics in deep-submicron CMOS transistorsMaterials Science in Semiconductor Processing, 2001
- Aluminum-induced crystallization of amorphous silicon on glass substrates above and below the eutectic temperatureApplied Physics Letters, 1998