Graphene/WSeTe van der Waals heterostructure: Controllable electronic properties and Schottky barrier via interlayer coupling and electric field
Authors:
- Tuan V. VuTVTuan V. Vu
- Nguyen V. HieuNHNguyen V. Hieu
- Huynh V. PhucHPHuynh V. Phuc
- Nguyen N. HieuNHNguyen N. Hieu
- H.D. BuiHBH.D. Bui
- M. IdreesMIM. Idrees
- Bin AminBABin Amin
- Chuong V. NguyenCNChuong V. Nguyen
- 1 March 2020
- journal article
- research article
- Published by Elsevier in Applied Surface Science
- Vol. 507
Abstract
No abstract availableKeywords
Funding Information
- Vietnam National Foundation for Science and Technology Development (103.01-2019.05)
- Higher Education Commission of Pakistan
This publication has 62 references indexed in Scilit:
- Graphene field effect transistor without an energy gapProceedings of the National Academy of Sciences, 2013
- Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronicsNature Nanotechnology, 2012
- Band Gap Tuning of Hydrogenated Graphene: H Coverage and Configuration DependenceThe Journal of Physical Chemistry C, 2011
- Tunable Band Gaps in Bilayer Graphene−BN HeterostructuresNano Letters, 2011
- A consistent and accurateab initioparametrization of density functional dispersion correction (DFT-D) for the 94 elements H-PuThe Journal of Chemical Physics, 2010
- The electronic properties of grapheneReviews of Modern Physics, 2009
- Superior Thermal Conductivity of Single-Layer GrapheneNano Letters, 2008
- Substrate-induced bandgap opening in epitaxial grapheneNature Materials, 2007
- Energy Gaps in Graphene NanoribbonsPhysical Review Letters, 2006
- Perdew, Burke, and Ernzerhof Reply:Physical Review Letters, 1998