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Monte Carlo particle simulation of the hole-electron plasma formed in a
p
-
n
junction
Home
Publications
Monte Carlo particle simulation of the hole-electron plasma formed in a
p
-
n
junction
Monte Carlo particle simulation of the hole-electron plasma formed in a
p
-
n
junction
Author:
CM
C. Moglestue
C. Moglestue
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27 March 1986
journal article
Published by
Institution of Engineering and Technology (IET)
in
Electronics Letters
Vol. 22
(7)
,
397-398
DOI:
10.1049/el:19860270
Abstract
The current through a forward-biased
p
-
n
junction in GaAs has been simulated. It was found that a stationary plasma accumulates on both sides of the junction, which peaks at the
n
-type side of the junction.
Keywords
P- N JUNCTION
FORWARD-BIASED JUNCTION
SOLID-STATE PLASMA
III-V SEMICONDUCTORS
MONTE CARLO PARTICLE SIMULATION
STATIONARY PLASMA
GAAS
HOLE-ELECTRON PLASMA
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