High-Current Metal Oxide Semiconductor Field-Effect Transistors on H-Terminated Diamond Surfaces and Their High-Frequency Operation
Author:
- Hiroshi KawaradaHKHiroshi Kawarada
- 1 September 2012
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 51 (9) , 90111
Abstract
Metal semiconductor field-effect transistors (MESFETs) or metal oxide semiconductor FETs (MOSFETs) can be fabricated on hydrogen-terminated diamond without losing the surface hydrogen–carbon bonds and the surface adsorbates responsible for the surface carrier generation. Those FETs show their best performance in diamond transistors. The maximum drain current density is above 1 A/mm and the highest transconductance is 400 mS/mm. These values are comparable to those of modern FETs made of Si or III–V semiconductors. Regarding RF performance, the highest cutoff frequency reaches nearly 50 GHz. The power handling capability exceeds those of Si and GaAs at 1 GHz. The function of surface adsorbates and their stabilization are crucial for the application of diamond FETs.Keywords
This publication has 29 references indexed in Scilit:
- Fabrication of T-Shaped Gate Diamond Metal–Insulator–Semiconductor Field-Effect TransistorsJapanese Journal of Applied Physics, 2006
- Over 20-GHz Cutoff Frequency Submicrometer-Gate Diamond MISFETsIEEE Electron Device Letters, 2004
- Influence of epitaxy on the surface conduction of diamond filmDiamond and Related Materials, 2004
- High-frequency performance of diamond field-effect transistorIEEE Electron Device Letters, 2001
- High-preformance diamond surface-channel field-effect transistors and their operation mechanismDiamond and Related Materials, 1999
- Study of the effect of hydrogen on transport properties in chemical vapor deposited diamond films by Hall measurementsApplied Physics Letters, 1996
- Hydrogen-terminated diamond surfaces and interfacesSurface Science Reports, 1996
- Fabrication and Characterization of Metal-Semiconductor Field-Effect Transistor Utilizing Diamond Surface-Conductive LayerJapanese Journal of Applied Physics, 1995
- Enhancement mode metal-semiconductor field effect transistors using homoepitaxial diamondsApplied Physics Letters, 1994
- Characterization of hydrogen-terminated CVD diamond surfaces and their contact propertiesDiamond and Related Materials, 1994