Dual-ion ECRAM as a stable and accurate analog synapse
Authors:
- Hossain Mansur Resalat FaruqueHFHossain Mansur Resalat Faruque
- Aminul IslamAIAminul Islam
- Matthew J. VoegtleMVMatthew J. Voegtle
- Natan HoltzmanNHNatan Holtzman
- In-Tae BaeIBIn-Tae Bae
- Smitha S. SwainSSSmitha S. Swain
- Keonwon BeomKBKeonwon Beom
- Ryan C. DempseyRDRyan C. Dempsey
- C. Jennie SmithCSC. Jennie Smith
- T. Patrick XiaoTXT. Patrick Xiao
- Christopher H. BennettCBChristopher H. Bennett
- Sapan AgarwalSASapan Agarwal
Abstract
No abstract availableFunding Information
- Laboratory Directed Research and Development
- U.S. Department of Energy
- Sandia National Laboratories
This publication has 36 references indexed in Scilit:
- Electrochemical Random-Access Memory: Progress, Perspectives, and OpportunitiesChemical Reviews, 2025
- Nonvolatile Electrochemical Random‐Access Memory under Short CircuitAdvanced Electronic Materials, 2022
- ECRAM Materials, Devices, Circuits and Architectures: A PerspectiveAdvanced Materials, 2022
- Cu-Doped and Un-Doped WO3 Photochromic Thin FilmsJournal of Electronic Materials, 2022
- DFT+U study of the electronic structure changes of WO3 monoclinic and hexagonal surfaces upon Cu, Ag, and Au adsorption. Applications for CO adsorptionSurface Science, 2021
- The catalytic activity of Pt atomic-doped Cu(111) surface alloy for the water dissociation reactionChemical Physics, 2021
- Fabrication and characterization of Cu2O/Cu-WO3 bilayers for lateral programmable metallization cellsApplied Surface Science, 2020
- Li‐Ion Synaptic Transistor for Low Power Analog ComputingAdvanced Materials, 2016
- The role of surface oxygen vacancies upon WO3 conductivitySurface Science, 2003
- The oxidation kinetics of tungsten and the determination of oxygen diffusion coefficient in tungsten trioxideCorrosion Science, 1980