Atomic ordering in As and alloy semiconductors
Authors:
- 15 June 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 58 (24) , 2567-2570
Abstract
GaInAs-InP and GaInAsP-InP multilayers have been investigated by transmission electron microscopy. Electron diffraction studies on 〈1¯10〉 edge-on samples indicate that atomic ordering produces a phase with R3¯m symmetry. This is of different symmetry from the one observed previously in GAlnAs, GaAsSb, and GalnAs. Only one or two variants of the ordered phase are observed in our layered structure.This publication has 13 references indexed in Scilit:
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