Reliability of III–V devices – The defects that cause the trouble
Authors:
- Sokrates T. PantelidesSPSokrates T. Pantelides
- Yevgeniy PuzyrevYPYevgeniy Puzyrev
- Xiao ShenXSXiao Shen
- Tania RoyTRTania Roy
- Sandeepan DasGuptaSDSandeepan DasGupta
- Blair R. TuttleBTBlair R. Tuttle
- Daniel M. FleetwoodDFDaniel M. Fleetwood
- Ronald D. SchrimpfRonald D. Schrimpf
- 1 February 2012
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 90, 3-8
Abstract
No abstract availableKeywords
Funding Information
- ONR MURI (N-00014-08-100655)
- McMinn Endowment
This publication has 13 references indexed in Scilit:
- Recoverable degradation in InAs/AlSb high-electron mobility transistors: The role of hot carriers and metastable defects in AlSbJournal of Applied Physics, 2010
- Electrical-stress-induced degradation in AlGaN/GaN high electron mobility transistors grown under gallium-rich, nitrogen-rich, and ammonia-rich conditionsApplied Physics Letters, 2010
- Theory of hot-carrier-induced phenomena in GaN high-electron-mobility transistorsApplied Physics Letters, 2010
- Nanoscale mapping of temperature and defect evolution inside operating AlGaN/GaN high electron mobility transistorsApplied Physics Letters, 2009
- Reliability of GaN High-Electron-Mobility Transistors: State of the Art and PerspectivesIEEE Transactions on Device and Materials Reliability, 2008
- First-principles calculations for defects and impurities: Applications to III-nitridesJournal of Applied Physics, 2004
- Defect Generation by Hydrogen at the Si-InterfacePhysical Review Letters, 2001
- Defect generation in field-effect transistors under channel-hot-electron stressJournal of Applied Physics, 2000
- Interactions of hydrogen with native defects in GaNPhysical Review B, 1997
- Trap creation in silicon dioxide produced by hot electronsJournal of Applied Physics, 1989