High power RF operation of AlGaN/GaN HEMTs grown on insulating silicon carbide substrates
Authors:
- 30 April 1998
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 34 (9) , 922-924
Abstract
Excellent RF performance is reported for AlGaN HEMTs fabricated on electrically insulating SiC substrates. The transistors have an fmax = 42 GHz, and an ft = 15 GHz. At 10 GHz, 320 µm wide transistors had a total power of 900 mW with a gain of 6.5 dB, which corresponds to a power density of 2.8 W/mm.Keywords
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